Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• ions (He+ ≈1–2 MeV). It impinges on the target material which provides good mass and depth resolution and also probes smaller radiation damages [35]. The damage produced by ion implantation in semiconductors consists of randomly distributed atoms displaced from their regular lattice sites up to a depth

• samples, the backscattered (BS) yield in an aligned direction reduces to 5% and 7%, respectively. In defect analysis through ion implantation [42], the category-I damage is the subthreshold damage (i.e., partially damaged region) before it completely turns amorphous. On a complete amorphization, an

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

• regimes become the basis of commonly used material processing techniques such as high-energy ion implantation, widely applied in laser, detector, and semiconductor industries [30]. Finally, at low (keV) energies, the interaction of heavy ions is dominated by nuclear stopping, which is used in the most

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• microcircuits through the introduction of P donors by diffusion doping of wafers with an efficiency comparable to monolayer doping [18] or ion implantation [19]. This paper outlines the successful formation of the cubic Si3P4 phase under mild conditions. The technique developed for this investigation requires

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• next section, the implantation depths of argon, hydrogen, and oxygen are discussed regarding their impact on the amorphization process. Ion implantation The implantation depth of each chemical element (e.g., hydrogen, oxygen, and argon) and the number of implanted atoms greatly vary with respect to the

Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

• Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

• displacements, replacement collisions, vacancy formation, and a collision cascade as well as backscattered ions, secondary ion emission, and ion implantation. A more detailed description of ion–solid interactions can be found in [20][21]. The difference between different ion species, energies, and incident

• of induced defects and number of implanted ions is limited in FIBs that are optimized for patterning applications (such as Ga FIB/SEM or HIM when operated with Ne). The highest concentration of ion implantation and defects is reached once the sample has been milled down to a depth which corresponds

• to the interaction volume depth. This is referred to as the steady-state condition. The time it takes to mill the sample to that depth and until the steady-state condition is reached determines the maximal area of specific ion implantation concentration. The calculations presented here determine the

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This

• ; focused helium ion beam-induced deposition; focused helium ion beam milling; helium ion beam lithography; helium ion implantation; Introduction Since the helium ion microscope (HIM) was introduced 15 years ago [1][2][3], over one hundred HIMs have been installed worldwide and over one thousand research

• irradiation effects, such as defect formation and ion implantation, are used to locally change the properties of the material, and at higher doses, nanofabrication is performed using localized material removal (by sputtering) or addition (by gas-assisted deposition). Sometimes, lower-dose irradiation effects

The role of gold atom concentration in the formation of Cu–Au nanoparticles from the gas phase

• Yuri Ya. Gafner,
• Svetlana L. Gafner,
• Darya A. Ryzkova and
• Andrey V. Nomoev

Beilstein J. Nanotechnol. 2021, 12, 72–81, doi:10.3762/bjnano.12.6

• control over the composition of the synthesized bimetallic nanoparticles. The fabrication of Cu–Au bimetallic nanoparticles using ion implantation [11] or thermal evaporation in ultrahigh vacuum [12][13] are typical examples of these techniques. Also, in [14], the Cu–Au nanoalloys were deposited onto

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• SEM in terms of lateral resolution, depth of field, surface sensitivity, and ability to image electrically insulating samples [13]. Furthermore, nanoscale structuration with noble gas ions can yield sub-10 nm structures without unwanted metal ion implantation, a sizeable advantage over traditional

Ultrasensitive detection of cadmium ions using a microcantilever-based piezoresistive sensor for groundwater

• Dinesh Rotake,
• Anand Darji and
• Nitin Kale

Beilstein J. Nanotechnol. 2020, 11, 1242–1253, doi:10.3762/bjnano.11.108

• vapor deposition (LPCVD) furnace at 630 °C and boron doping (1018 per cm3) is carried out using ion implantation at 35 keV. The upper SiO2 layer is formed by re-oxidizing the polysilicon in an oxidation furnace [40]. The stiffness (k) of the fabricated piezoresistive sensor measured using AFM is 131–146

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

Choosing a substrate for the ion irradiation of two-dimensional materials

• Egor A. Kolesov

Beilstein J. Nanotechnol. 2019, 10, 531–539, doi:10.3762/bjnano.10.54

• crystal lattice, leading to ion implantation (doping) [25]. For the latter to occur, the ion should have a considerably low energy – of about 20–200 eV, with the most effective implantation occurring at 25–75 eV [1][25][26][27][28][29]. The process peaks in the lower part of this region for 2D TMDs and in

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• of SiOxFy particles, which start the formation of randomly distributed etch pits [42]. These regions become deeper during the process, thanks to the strong anisotropic nature of this RIE etching. A back-side emitter was formed by phosphorous ion implantation, with energy of 2 × 1015 cm−2 and dose of

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• sensor applications [3][4][5], for stray field design [6][7] and particle transport in lab-on-chip systems [8][9][10][11], or in spintronics and magnonics [12][13][14]. Currently available techniques for domain patterning are either based on focused ion beams (FIB) [15][16][17], ion implantation [18][19

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• pyrolysis [13] and ion beam synthesis in an SiO2 matrix [14][15][16][17]. Compared to conventional ion beam synthesis using low-energy ion implantation, collisional mixing of Si into an SiO2 layer by ion irradiation at higher energies leads to a better control over the Si excess, and a self-aligned δ-layer

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• the as-prepared TiO2 materials usually report the use of wet-chemical routes, ion implantation, and calcination under reducing atmospheres, among others approaches [4][24][25]. However, some of these methods have shown detrimental effects on the opto-electronic properties of TiO2. Su et al. [26

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• annealing and N2O plasma treatment [31]; and (ii) inactivating the defects in the semiconductor by means of introducing new elements to form stable chemical bonds with the defects, for example by fluoride ion implantation and nitrogen annealing [32][33]. Conclusion The impact of the TIGZO on the

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• good qualitative agreement with the measured ones. Fabrication of the samples Firstly, SiNC-rich layers were fabricated by Si ion implantation into a polished silica substrate followed by thermal annealing at 1100 °C (for details see [28]). An implant energy of 400 keV with an implant fluence of 1

• -funded “Australian Facility for Advanced ion-implantation Research (AFAiiR)” at the Australian National University for access to ion-implantation facilities.

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• implantation, which suffers from several downsides when used on sub-10 nm devices and with three-dimensional architectures [1][2]. The main issues with ion implantation are that it introduces crystal damage that cannot be annealed out of these extremely small sub-10 nm devices, and that it is unable to

• conformally dope three-dimensional nanostructures due to the directionality of the technique. Ion implantation operators have devised several methods to counter these issues such as hot implantations but have shown only moderate success [3][4]. The introduction of crystal damage has major consequences when

• the silicon–insulator interface. A spike in P concentration is seen showing that it may also be trapped at this point in the substrate. This spike could be explained by the slower diffusion of P in SiO2 compared to Si and a similar feature has been seen previously after ion implantation of SOI

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• ]. Post-synthesis treatments such as cold plasmas and ion implantation emerge as versatile options to engineer nanostructured carbon materials with different elements [80]. These techniques allow for high dopant concentrations (about 10 atom %) and for the design of different architectures adjusting the

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• nanowire diameters of about 10 nm, a dopant deactivation is observed due to the dielectrical mismatch between the silicon and its surroundings. However, our previous investigations on 5 nm thick SiGeOI layers doped by ion implantation and activated by conventional rapid thermal annealing (RTA) [39][40

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• traditional LED by producing a TiO2 microstructure array on p-GaN through dipping and rapid convective deposition and using noncrystalline TiO2 and anatase TiO2 with a diameter of 520 nm [13]. Huang et al. used Zn and Mg for ion implantation at the GZO thin layer and then adopted rapid thermal annealing to

BN/Ag hybrid nanomaterials with petal-like surfaces as catalysts and antibacterial agents

• Konstantin L. Firestein,
• Denis V. Leybo,
• Alexander E. Steinman,
• Andrey M. Kovalskii,
• Andrei T. Matveev,
• Anton M. Manakhov,
• Irina V. Sukhorukova,
• Pavel V. Slukin,
• Nadezda K. Fursova,
• Sergey G. Ignatov,
• Dmitri V. Golberg and
• Dmitry V. Shtansky

Beilstein J. Nanotechnol. 2018, 9, 250–261, doi:10.3762/bjnano.9.27

• bactericidal properties of h-BN nanosheets can be significantly improved after the growth of Ag nanoparticles (NPs) on their surfaces. In our previous work [16] we have produced BN/Ag HNMs by Ag ion implantation into the BN NPs with petal-like surfaces. However, this technique does not allow for the production

Laser-assisted fabrication of gold nanoparticle-composed structures embedded in borosilicate glass

• Nikolay Nedyalkov,
• Mihaela Koleva,
• Nadya Stankova,
• Rosen Nikov,
• Mitsuhiro Terakawa,
• Yasutaka Nakajima,
• Lyubomir Aleksandrov and
• Reni Iordanova

Beilstein J. Nanotechnol. 2017, 8, 2454–2463, doi:10.3762/bjnano.8.244

• semiconductor by varying the particle concentration [9][10][11]. Any further progress regarding detailed studies of or in finding novel applications for these materials is still hampered by the lack of efficient fabrication techniques. Although various techniques, such as chemical reactions, ion implantation

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• materials. The preparation of GeH requires the synthesis of a CaGe2 precursor phase followed by its topotactic deintercalation in HCl. GeH is a metastable phase, and begins to amorphize when annealed above 75 °C. Consequently, traditional doping processes such as the direct ion-implantation of GeH cannot be

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• carbon in nickel at high temperatures and removing the metal after the deposition process. Here carbon is introduced into Ni by deposition of C/Ni sandwich layers or by ion implantation [28] or dissolution of carbon into nickel in a plasma-enhanced CVD process [29]. Upon heating up to about 1000 °C